 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 0.4 -0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.80.2 1.5 0.65 -0.15 +0.1 FEATURES * Low Noise and High Gain 0.95 0.95 2.90.2 NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz * High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 65 20 12 3.0 100 200 150 to +150 V V V mA mW C C 0.3 Marking 1.1 to 1.4 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE* fT Cre** 50 120 7 0.55 2 MIN. TYP. MAX. 1.0 1.0 300 UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 10 V, IC = 20 mA A A GHz 1.0 pF dB 2.0 dB VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 7 mA, f = 1.0 GHz S21e NF 11.5 1.1 * Pulse Measurement PW 350 s, Duty Cycle 2 % ** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. hFE Classification Class Marking hFE R23/Q * R23 50 to 100 R24/R * R24 80 to 160 R25/S * R25 125 to 250 * Old Specification / New Specification Document No. P10356EJ5V1DS00 (5th edition) Date Published March 1997 N Printed in Japan 0 to 0.1 (c) 0.16 -0.06 +0.1 0.4 -0.05 +0.1 1 3 1985 2SC3356 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE PT-Total Power Dissipation-mW 200 Cre-Feed-back Capacitance-pF Free Air f = 1.0 MHz 1 100 0.5 0 50 100 150 0.3 0 0.5 1 2 5 10 20 30 TA-Ambient Temperature-C DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V 15 VCB-Collector to Base Voltage-V INSERTION GAIN vs. COLLECTOR CURRENT hFE-DC Current Gain 100 |S21e|2-Insertion Gain-dB 10 50 5 VCE = 10 V f = 1.0 GHz 1 5 10 50 70 IC-Collector Current-mA 20 10 0.5 1 5 10 50 0 0.5 IC-Collector Current-mA GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY Gmax fT-Gain Bandwidth Product-MHz 3.0 2.0 1.0 0.5 0.3 0.2 VCE = 10 V 0.1 0 0.5 1.0 5.0 10 30 Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB 5.0 20 |S21e|2 10 0 VCE = 10 V IC = 20 mA 0.1 0.2 0.4 0.6 0.81.0 2 f-Frequency-GHz IC-Collector Current-mA 2 2SC3356 NOISE FIGURE vs. COLLECTOR CURRENT 7 6 NF-Noise Figure-dB VCE = 10 V f = 1.0 GHz |S21e|2-Insertion Gain-dB 18 15 NF-Noise Figure-dB 5 4 3 2 1 0 0.5 1 5 10 50 70 NOISE FIGURE, FORWARD INSERTION GAIN vs. COLLECTOR TO EMITTER VOLTAGE 5 f = 1.0 GHz IC = 20 mA 4 |S21e|2 3 2 NF 1 12 6 3 0 0 2 4 6 8 10 IC-Collector Current-mA VCE-Collector to Emitter Voltage-V S-PARAMETER VCE = 10 V, IC = 5 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.651 0.467 0.391 0.360 0.360 0.361 0.381 0.398 0.423 0.445 S11 69.3 113.3 139.3 159.2 176.9 172.7 160.3 152.2 143.3 137.6 S21 10.616 6.856 4.852 3.802 3.098 2.646 2.298 2.071 1.836 1.689 S21 129.3 104.4 90.9 81.2 72.9 67.3 59.3 55.2 49.0 46.2 S12 0.051 0.071 0.086 0.101 0.118 0.137 0.157 0.180 0.203 0.220 S12 59.2 54.4 56.0 59.1 61.0 63.5 63.3 64.1 63.7 64.7 S22 0.735 0.550 0.468 0.426 0.397 0.373 0.360 0.337 0.320 0.302 S22 28.1 34.1 33.9 33.6 35.7 38.3 43.0 45.9 52.3 52.2 VCE = 10 V, IC = 5 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.339 0.258 0.243 0.242 0.260 0.269 0.294 0.314 0.343 0.367 S11 107.0 147.3 167.7 177.0 164.5 157.6 148.7 143.1 136.5 131.4 S21 16.516 8.928 6.022 4.633 3.744 3.193 2.750 2.479 2.185 2.016 S21 108.7 92.1 83.0 76.2 69.9 65.7 58.8 55.5 50.1 47.8 S12 0.035 0.060 0.085 0.109 0.136 0.160 0.187 0.212 0.238 0.254 S12 66.1 71.0 71.9 72.2 70.4 69.9 66.7 65.2 62.4 61.6 S22 0.459 0.343 0.305 0.284 0.266 0.246 0.233 0.208 0.190 0.173 S22 36.6 32.9 29.9 29.4 31.7 35.0 40.4 43.6 50.5 48.3 3 2SC3356 S-PARAMETER S11e, S22e-FREQUENCY CONDITION VCE = 10 V 200 MHz Step 0. THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 D LOAD TION COEF WAR FLEC FCIENT 0.4 0.0TOR 6 IN DE 7 .03THS TO GLE OF RE 0G 4 GRE AN 0.4 0.4 ES LEN-160 0 4E 6 0 .0 0.0 AV 5 W 15 0.4 5 0.4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 0.1 NT 14 0.4 6 00 E ITIV 40 ON 0 ER 4 MP 0. -1 EA CO C 5 0. 07 43 0. 0 13 1.6 12 0.7 8 0.0 2 0.4 0.9 1.0 0.8 1.2 9 0.0 1 0.4 0.10 0.40 110 0.11 0.39 100 0.12 0.38 0.13 0.37 90 0.14 0.36 80 0.15 0.35 70 1.4 0.1 6 0.3 4 0 0.6 6 00 1.8 0.1 0.3 7 3 0. 2.0 0.2 50 0. 18 32 19 0. 31 0. ( -Z-+-J-XTANCE CO ) MPO N T EN 0.4 0 0.2 0 0.3 40 O WAVELEN G 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 0.1 0.4 0.6 S22e 0. 8 E NC TA X - AC -J -O RE --Z ) 0.3 ( 0. 4 E IV AT IC = 5 mA 0. 1.6 0. 5 2.0 0.6 1.8 0.7 0.8 0.9 1.2 S21e-FREQUENCY CONDITION VCE = 10 V IC = 20 mA 90 120 0.2 GHz 60 150 S21e 30 150 180 2.0 GHz 5 10 15 20 0 180 -150 -30 -150 -120 -90 -60 4 4 0.3 6 0.1 0.35 0.15 -70 1.0 1.4 120 -120 -90 3. 0 0.2 GHz 5.0 4.0 32 0. 18 -5 0 3 0.3 7 0.1 -6 0 0.36 0.14 -80 1.0 IC = 20 mA 0.8 0.6 1. 0 0.2 IC = 5 mA 0.2 GHz 20 50 REACTANCE COMPONENT R ---- 0.2 ZO ( ) 10 0.37 0.13 0.4 0.4 S11e 0 1. 0.2 GHz IC = 20 mA 0.8 0.6 0.2 0.2 -90 0.38 0.39 0.12 0.11 -100 0.40 0.10 -11 0 0.4 1 0.0 0.4 9 02 -1 .08 20 NE G -1 0. 4 0. 3 07 30 0. 4 0.6 3. 0.8 0 1 0.2 9 0.2 30 0.3 4.0 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 1.0 2.0 GHz 6.0 0.2 10 0.1 20 50 0.25 0.25 0 0.26 0.24 -10 0.27 0.23 0.2 8 0.2 2 -20 0 .29 0.2 1 0.3 -3 0.2 0 0 0 -4 0 0. 0. 31 19 S12e-FREQUENCY CONDITION 90 VCE = 10 V IC = 20 mA 2.0 GHz 60 S12e 30 0.2 GHz 0.05 0.1 0.15 0 0.2 0.25 -30 -60 2SC3356 [MEMO] 5 2SC3356 [MEMO] 6 2SC3356 [MEMO] 7 2SC3356 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
Price & Availability of 2SC3356
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |